to-92 plastic-encapsulate transistors features power dissipation pcm : 1 w (ta=25 ) : 2 w (tc=25 ) maximum maximum maximum maximum ratings ratings ratings ratings (ta=25 unless otherwise noted) symbol symbol symbol symbol parameter parameter parameter parameter value value value value units units units units vcbo vcbo vcbo vcbo collector-base voltage 40 v vceo vceo vceo vceo collector-emitter voltage 25 v vebo vebo vebo vebo emitter-base voltage 5 v ic ic ic ic collector current -continuous 1.5 a tj tj tj tj junction temperature 150 tstg tstg tstg tstg storage temperature -55-150 electrical electrical electrical electrical characteristics characteristics characteristics characteristics (tamb=25 unless otherwise specified) parameter parameter parameter parameter symbol symbol symbol symbol test test test test conditions conditions conditions conditions min min min min typ typ typ typ max max max max unit unit unit unit collector-base collector-base collector-base collector-base breakdown breakdown breakdown breakdown voltage voltage voltage voltage v (br)cbo i c =100ua, i e =0 40 v collector-emitter collector-emitter collector-emitter collector-emitter breakdown breakdown breakdown breakdown voltage voltage voltage voltage v (br)ceo i c =0.1ma, i b =0 25 v emitter-base emitter-base emitter-base emitter-base breakdown breakdown breakdown breakdown voltage voltage voltage voltage v (br)ebo i e =100 a, i c =0 5 v collector collector collector collector cut-off cut-off cut-off cut-off current current current current i cbo v cb =40v, i e =0 0.1 a emitter emitter emitter emitter cut-off cut-off cut-off cut-off current current current current i ceo v ce =20v, i e =0 0.1 a emitter emitter emitter emitter cut-off cut-off cut-off cut-off current current current current i ebo v eb =5v, i c =0 0.1 a dc dc dc dc current current current current gain gain gain gain h fe(1) v ce =1v, i c =100ma 85 400 h fe(2) v ce =1v, i c =800ma 40 collector-emitter collector-emitter collector-emitter collector-emitter saturation saturation saturation saturation voltage voltage voltage voltage v ce(sat) i c =800ma, i b =80ma 0.5 v base-emitter base-emitter base-emitter base-emitter saturation saturation saturation saturation voltage voltage voltage voltage v be(sat) i c =800ma, i b =80ma 1.2 v base-emitter base-emitter base-emitter base-emitter voltage voltage voltage voltage v be v ce =1v, i c =10ma 1 v transition transition transition transition frequency frequency frequency frequency f t v ce =10v, i c =50ma,f=30mh z 100 mhz classification classification classification classification of of of of hfe(1) hfe(1) hfe(1) hfe(1) rank rank rank rank b c d d3 range range range range 85-160 120-200 160-300 300-400 to-92 1.emitter 2.base 3.collector 1 2 3 product specification 1 of 1 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
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